IEC 63068-3 Ed. 1.0 b:2020

Posted on: 12/15/202012/13/2020
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Posted in: IEC

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IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

Product Details

Edition:: 1.0
Published:: 07/13/2020
Number of Pages:: 51
File Size:: 1 file , 2.5 MB

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