IEC 62373-1 Ed. 1.0 b:2020

Posted on: 12/15/202012/13/2020
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Posted in: IEC

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IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).

This document also defines the terms pertaining to the conventional BTI test method.

Product Details

Edition:: 1.0
Published:: 07/15/2020
Number of Pages:: 44
File Size:: 1 file , 1.7 MB

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